Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime

@article{Pershin2008CurrentvoltageCO,
  title={Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime},
  author={Yuriy V. Pershin and Massimiliano Di Ventra},
  journal={Physical Review B},
  year={2008},
  volume={77},
  pages={073301}
}
It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage, the current density through the junction saturates at a specific value… Expand
View PDF on arXiv
22 Citations
Background Citations
10
Methods Citations
1

Figures from this paper

22 Citations

Citation Type

Citation Type

Spin extraction from a semiconductor through a space-charge layer and critical current density
Abstract Simulations are carried out to study the extraction of spin-polarized electrons at a nonmagnetic semiconductor/ferromagnetic semiconductor junction in the presence of a space-charge layer. A… Expand
Spin-dependent Seebeck effect in non-local spin valve devices
We performed measurements of Py/Cu and Py/Ag lateral spin valves as a function of injection current direction and magnitude. Above a “critical” current, there is an unexpected dependence of spin… Expand
Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/p–GaSe structures
Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the “metal-layered semiconductor” interface were formed after growing Ni layers on the p-GaSe (0001)… Expand
Spin transport in lateral spin valves and across a metal-insulator transition in V₂O₃
Spin valves is a class of spintronic devices that use spin degree of freedom. They have been used to study various condensed matter phenomena. Applications of the spin valves proved to be very useful… Expand
Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics
Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example… Expand
Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions
Features of the formation of Au/Ni/〈C〉/n-Ga2O3 hybrid nanostructures on a Van der Waals surface (0001) of “layered semiconductor-ferroelectric” composite nanostructures (p-GaSe〈KNO3〉) are studied… Expand
Surface effects on ionic Coulomb blockade in nanometer-size pores.
TLDR
An effective kinetic model that captures the ionic Coulomb blockade behavior observed in MD simulations is formulated and reveals general trends in nanopore selectivity and resistance. Expand
Electric currents in networks of interconnected memristors.
TLDR
It is shown that the polarity of the memristors can play an important role in the overall properties of the Memristor network, in particular its speed of switching, which may have a potentially important application to faster computers. Expand
Memory effects in complex materials and nanoscale systems
TLDR
The memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics are described within the framework of memristors, memcapacitors and meminductors. Expand
Operating conditions analysis of memristor model
TLDR
A detailed operating conditions of tunneling modulation model of memristor is studied and the operating frequency and voltage ranges are analyzed in this paper. Expand
...
1
2
3
...

References

Current-Voltage Characteristics of Semiconductor/Ferromagnet Junctions in the Spin-Blockade Regime
It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the… Expand