Current transport mechanisms of Schottky barrier and modified Schottky barrier MOSFETs

@article{Tsui2007CurrentTM,
  title={Current transport mechanisms of Schottky barrier and modified Schottky barrier MOSFETs},
  author={Bing-Yue Tsui and Chi-Pei Lu},
  journal={ESSDERC 2007 - 37th European Solid State Device Research Conference},
  year={2007},
  pages={307-310}
}
Current transport mechanisms of Schottky barrier (SB) and modified Schottky barrier (MSB) MOSFETs are investigated by measuring the temperature effect on current-voltage characteristics. For SB MOSFETs, current transport could be dominated by thermionic emission or tunneling mechanism depends on the Schottky barrier height and the gate voltage. The current transport of the MSB MOSFETs changes from tunneling mechanism to drift-diffusion mechanism as the gate voltage increases. The changing point… CONTINUE READING

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