Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo

Abstract

The dual-material gate and asymmetrical halo structure is used in surrounding gate MOSFET to improve the performance. By treating the device as three surrounding-gate MOSFETs connecting in series and maintaining current continuity, a comprehensive drain current model is developed for it. It is concluded that the device also exhibits increased current… (More)

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@article{Li2010CurrentMA, title={Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo}, author={Zun-Chao Li and Jin-peng Xu and Lin-Lin Liu}, journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology}, year={2010}, pages={1904-1906} }