Current instabilities in GaN-based devices

@article{Daumiller2001CurrentII,
  title={Current instabilities in GaN-based devices},
  author={Ingo Daumiller and Didier Th{\'e}ron and Christophe Gaqui{\`e}re and Al Vescan and R.. Dietrich and A. Wieszt and Helmut Leier and Ramakrishna Vetury and U. K. Mishra and I. P. Smorchkova and Simona Keller and C. T.-C. Nguyen and Erhard Kohn},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={62-64}
}
Current dispersion effects have been experimentally investigated in a variety of AlGaN/GaN heterostructure FETs with large signal and switching measurements including HEMTs with doped and undoped barrier layer. A range of dispersion frequencies from 10/sup -3/ Hz to 10 GHz were observed, where the output current amplitude is drastically reduced. Through this effect the full channel charge of an AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions. This… CONTINUE READING
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