Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

@article{Kaneko2015CurrentcollapsefreeOU,
  title={Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain},
  author={Saichiro Kaneko and Masayuki Kuroda and Manabu Yanagihara and Ayanori Ikoshi and Hideyuki Okita and Tatsuo Morita and Kenichiro Tanaka and Masahiro Hikita and Yasuhiro Uemoto and Satoru Takahashi and Tetsuzo Ueda},
  journal={2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2015},
  pages={41-44}
}
Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor (GIT). The additional p-GaN region enables hole injection which effectively releases trapped electrons at around drain region after the application of high drain voltages. The p-GaN region is electrically connected to the drain electrode so that this is named as Hybrid Drain-embedded GIT (HD-GIT). The… CONTINUE READING
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