Current and optical noise of GaN / AlGaN light emitting diodes

@inproceedings{Sawyer2006CurrentAO,
  title={Current and optical noise of GaN / AlGaN light emitting diodes},
  author={Shayla M. L. Sawyer and Serguei L. Rumyantsev and Michael S. Shur and Nezih Pala and Yu. Bilenko and J. P. Zhang and xuehao. hu and Alex Lunev and Jianyu Deng and R. Gaska},
  year={2006}
}
Low frequency noise of current and light intensity of ultraviolet light emitting diodes LED with wavelength from 265 to 340 nm are the superposition of the 1/ f and generation-recombination noise. The dependence of generation-recombination noise on the LED current has a maximum caused by a relatively shallow trap level in the quantum well. The upper bound of this trap level concentration is estimated to be Nt=7 10 15 cm−3. The relative spectral noise density of the light intensity fluctuations… CONTINUE READING

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