# Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion

@article{Ang2016CurrentTemperatureSF,
title={Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion},
author={Yee Sin Ang and Lay Kee Ang},
journal={Physical review applied},
year={2016},
volume={6},
pages={034013}
}
• Published 2 September 2016
• Materials Science, Physics
• Physical review applied
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of…
39 Citations

## Figures and Tables from this paper

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials.
• Materials Science, Physics
Physical review letters
• 2018
The model resolves some of the conflicting results from prior works and is in agreement with recent experiments, and provides a simple analytical scaling for the extraction of the Schottky barrier height in 2D material-based heterostructures, paving the way for both a fundamental understanding of nanoscale interface physics and applied device engineering.
Theory of Thermionic Carrier Injection in Graphene/Organic Schottky Interface
• Materials Science
Front. Mater.
• 2019
Understanding the physics of charge transport in organic materials and charge injection across organic-based interface is critically important for the development of novel organic electronics and
Theory of Thermionic Carrier Injection in Graphene/Organic Schottky Interface
• 2019
Understanding the physics of charge transport in organic materials and charge injection across organic-based interface is critically important for the development of novel organic electronics and
Generalized High-Energy Thermionic Electron Injection at Graphene Interface
• Physics
Physical Review Applied
• 2019
Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks
Graphene/n-type silicon Schottky near-field thermophotovoltaic cell
• Engineering, Materials Science
Journal of Photonics for Energy
• 2019
Abstract. The model of a graphene/n-type silicon (n-Si) Schottky near-field thermophotovoltaic cell (GSNTC) composed of an emitter and a photovoltaic (PV) cell is updated and investigated, in which
Graphene-Semiconductor Contact
A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor
Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction
The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing
Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures
A novel technique and device structure is reported to probe the thermoelectric transport across Au/h-BN/graphene heterostructures, enabling Raman spectroscopy and thermometry to be obtained from the graphene top electrode in situ under device operating conditions.
Tunable band alignment in boron carbon nitride and blue phosphorene van der Waals heterostructure
• 2020
The hybridmonolayer of boron nitride and graphene, namely the BCxNmonolayer, has been recently revealed as a direct bandgap semiconductor with exceptional thermal,mechanical and optical properties.
Efficient utilization of multilayer graphene towards thermionic convertors
• Materials Science
• 2017
Abstract In this paper a comprehensive model to investigate the thermionic emission from few layer graphene (FLG) structures operating at finite temperature (T) and its feasibility towards thermionic

## References

SHOWING 1-10 OF 69 REFERENCES
Stacking-order dependent transport properties of trilayer graphene
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field
Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors.
A vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure is presented and two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage.
Trigonal warping and Berry's phase Nπ in ABC-stacked multilayer graphene
• Physics
• 2009
The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles
Graphene-GaN Schottky diodes
• Materials Science
Nano Research
• 2014
The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low
Stacking-dependent band gap and quantum transport in trilayer graphene
Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an
Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ Hamiltonian. The influence of strain on
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
It is shown that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.
Trilayer graphene is a semimetal with a gate-tunable band overlap
• Medicine, Physics
Nature Nanotechnology
• 2009
It is found that trilayer graphene is a semimetal with a resistivity that decreases with increasing electric field, a behaviour that is markedly different from that of single-layer and bilayer graphene.
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.
This review investigates the experimental efforts in interfacing 2D layers with 3D materials and analyzes the properties of the heterojunctions formed between them, calling for careful reconsideration of the physical models describing the junction behavior.
Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.
This paper demonstrates a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition, and provides a systematic comparison of the graphene/MoS 2 heterojunction contact to more traditional MoS2-metal junctions.