# Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion

@article{Ang2016CurrentTemperatureSF,
title={Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion},
author={Yee Sin Ang and Lay Kee Ang},
journal={Physical review applied},
year={2016},
volume={6},
pages={034013}
}
• Published 2 September 2016
• Physics
• Physical review applied
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of…
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## References

SHOWING 1-10 OF 64 REFERENCES

### Stacking-order dependent transport properties of trilayer graphene

• Physics
• 2011
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field

### Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors.

• Physics
Nano letters
• 2016
A vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure is presented and two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage.

### Trigonal warping and Berry's phase Nπ in ABC-stacked multilayer graphene

• Physics
• 2009
The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles

### Graphene-GaN Schottky diodes

• Materials Science
Nano Research
• 2014
The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low

### Stacking-dependent band gap and quantum transport in trilayer graphene

• Physics
• 2011
Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an

### Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

• Physics
Science
• 2012
It is shown that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.

### Trilayer graphene is a semimetal with a gate-tunable band overlap

• Physics
Nature Nanotechnology
• 2009
It is found that trilayer graphene is a semimetal with a resistivity that decreases with increasing electric field, a behaviour that is markedly different from that of single-layer and bilayer graphene.

### Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

• Physics
Nano letters
• 2014
This paper demonstrates a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition, and provides a systematic comparison of the graphene/MoS 2 heterojunction contact to more traditional MoS2-metal junctions.

### Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene

• Physics
• 2011
We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a �-band

### Band structure of ABC-stacked graphene trilayers

• Physics
• 2010
The ABC-stacked N-layer-graphene family of two-dimensional electron systems is described at low energies by two remarkably flat bands with Bloch states that have strongly momentum-dependent phase