Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion

@article{Ang2016CurrentTemperatureSF,
  title={Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion},
  author={Yee Sin Ang and Lay Kee Ang},
  journal={Physical review applied},
  year={2016},
  volume={6},
  pages={034013}
}
  • Y. Ang, L. Ang
  • Published 2 September 2016
  • Materials Science, Physics
  • Physical review applied
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of… 

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References

SHOWING 1-10 OF 69 REFERENCES
Stacking-order dependent transport properties of trilayer graphene
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field
Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors.
TLDR
A vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure is presented and two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage.
Trigonal warping and Berry's phase Nπ in ABC-stacked multilayer graphene
The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles
Graphene-GaN Schottky diodes
The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low
Stacking-dependent band gap and quantum transport in trilayer graphene
Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an
Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ Hamiltonian. The influence of strain on
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
TLDR
It is shown that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.
Trilayer graphene is a semimetal with a gate-tunable band overlap
TLDR
It is found that trilayer graphene is a semimetal with a resistivity that decreases with increasing electric field, a behaviour that is markedly different from that of single-layer and bilayer graphene.
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.
TLDR
This review investigates the experimental efforts in interfacing 2D layers with 3D materials and analyzes the properties of the heterojunctions formed between them, calling for careful reconsideration of the physical models describing the junction behavior.
Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.
TLDR
This paper demonstrates a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition, and provides a systematic comparison of the graphene/MoS 2 heterojunction contact to more traditional MoS2-metal junctions.
...
1
2
3
4
5
...