Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion

@article{Ang2016CurrentTemperatureSF,
  title={Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion},
  author={Yee Sin Ang and Lay Kee Ang},
  journal={Physical review applied},
  year={2016},
  volume={6},
  pages={034013}
}
  • Y. AngL. Ang
  • Published 2 September 2016
  • Physics
  • Physical review applied
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the contrasting current-temperature scaling relation of $J\propto T^2$ in the conventional Schottky interface and $J\propto T^3$ in graphene-based Schottky interface can be reconciled under Kane's $\mathbf{k} \cdot \mathbf{p}$ non-parabolic band model for narrow-gap semiconductor. Our new model suggests a more general form of… 

Figures and Tables from this paper

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials.

The model resolves some of the conflicting results from prior works and is in agreement with recent experiments, and provides a simple analytical scaling for the extraction of the Schottky barrier height in 2D material-based heterostructures, paving the way for both a fundamental understanding of nanoscale interface physics and applied device engineering.

Theory of Thermionic Carrier Injection in Graphene/Organic Schottky Interface

Understanding the physics of charge transport in organic materials and charge injection across organic-based interface is critically important for the development of novel organic electronics and

Theory of Thermionic Carrier Injection in Graphene/Organic Schottky Interface

Understanding the physics of charge transport in organic materials and charge injection across organic-based interface is critically important for the development of novel organic electronics and

Generalized High-Energy Thermionic Electron Injection at Graphene Interface

Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks

Graphene/n-type silicon Schottky near-field thermophotovoltaic cell

Abstract. The model of a graphene/n-type silicon (n-Si) Schottky near-field thermophotovoltaic cell (GSNTC) composed of an emitter and a photovoltaic (PV) cell is updated and investigated, in which

Designing few-layer graphene Schottky contact solar cells: Theoretical efficiency limits and parametric optimization

We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare

Graphene-Semiconductor Contact

A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing

Thermionic energy conversion based on 3D Dirac semimetals

First, we investigate theoretically the thermionic emission from three-dimensional Dirac semimetals (3D DSs), then we explore their practical application as the cathode of a thermionic energy

Generalized Fowler-Nordheim field-induced vertical electron emission model for two-dimensional materials

Current theoretical description of field-induced electron emission remains mostly bounded by the classic Fowler-Nordheim (FN) framework developed nearly one century ago. For the emerging class of

References

SHOWING 1-10 OF 64 REFERENCES

Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field

Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors.

A vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure is presented and two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage.

Trigonal warping and Berry's phase Nπ in ABC-stacked multilayer graphene

The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles

Graphene-GaN Schottky diodes

The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low

Stacking-dependent band gap and quantum transport in trilayer graphene

Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

It is shown that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.

Trilayer graphene is a semimetal with a gate-tunable band overlap

It is found that trilayer graphene is a semimetal with a resistivity that decreases with increasing electric field, a behaviour that is markedly different from that of single-layer and bilayer graphene.

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

This paper demonstrates a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition, and provides a systematic comparison of the graphene/MoS 2 heterojunction contact to more traditional MoS2-metal junctions.

Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene

We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a �-band

Band structure of ABC-stacked graphene trilayers

The ABC-stacked N-layer-graphene family of two-dimensional electron systems is described at low energies by two remarkably flat bands with Bloch states that have strongly momentum-dependent phase
...