CuInS2 thin film with flat surface by crystalization of Cu-In-S precursor

@article{Minemoto2011CuInS2TF,
  title={CuInS2 thin film with flat surface by crystalization of Cu-In-S precursor},
  author={Takashi Minemoto and Tsugunori Kondo and Yusuke Oda and Hideyuki Takakura},
  journal={2011 37th IEEE Photovoltaic Specialists Conference},
  year={2011},
  pages={000407-000410}
}
CuInS2 (CIS) films used in the absorber layer of solar cells are often prepared by the sulfurization of Cu-In metallic precursors. The CIS films usually show large surface roughness, which would decrease the open-circuit voltage of the solar cell because of a large np junction area and insufficient surface coverage of buffer layers. In this study, Cu-In-S… CONTINUE READING