Crystallography of excimer laser-crystallized In-Ga-Zn-O film

Abstract

It is found by nanobeam electron diffraction that the excimer laser crystallization of In-Ga-Zn-O films which are not c-axis-aligned can lead to formation of polycrystalline In-Ga-Zn-O thin films having spinel structures. The crystal structure of ZnIn<sub>x</sub>Ga<sub>2-x</sub>O<sub>4</sub> in which Ga site of ZnGa<sub>2</sub>O<sub>4</sub> is substituted… (More)

Cite this paper

@article{Shimomura2013CrystallographyOE, title={Crystallography of excimer laser-crystallized In-Ga-Zn-O film}, author={Akihisa Shimomura and Masaki Koyama and Takahisa Ishiyama and Masashi Ohta and Masashi Tsubuku and Erumu Kikuchi and Takuya Hirohashi and Masahiro Takahashi and Shunpei Yamazaki}, journal={2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)}, year={2013}, pages={155-158} }