Crystallographic dependence of loss in domain engineered relaxor-PT single crystals.

Abstract

Domain engineered 001 oriented relaxor-PbTiO(3) ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (</=0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the… (More)

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Cite this paper

@article{Zhang2009CrystallographicDO, title={Crystallographic dependence of loss in domain engineered relaxor-PT single crystals.}, author={Shujun Zhang and Nevin P Sherlock and Richard J. Meyer and Thomas R. Shrout}, journal={Applied physics letters}, year={2009}, volume={94 16}, pages={162906} }