Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing

@article{Ihn2005CrystallineQI,
  title={Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing},
  author={Soo-Ghang Ihn and Seong-June Jo and K. Oh and Tae-Woo Kim and Jong-In Song},
  journal={International Conference on Indium Phosphide and Related Materials, 2005},
  year={2005},
  pages={216-218}
}
Effects of post-growth rapid thermal annealing (RTA) on optical and structural properties of an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As multi-quantum-well (MQW) structure on a GaAs substrate by using an InAlAs/InGaAlAs metamorphic buffer were investigated. Photoluminescence spectrum and triple-axis (004) contour maps showed improvement in… CONTINUE READING