Crystal structure tuning in GaAs nanowires using HCl.

@article{Jacobsson2014CrystalST,
  title={Crystal structure tuning in GaAs nanowires using HCl.},
  author={Daniel Jacobsson and Sebastian Lehmann and Kimberly A Dick},
  journal={Nanoscale},
  year={2014},
  volume={6 14},
  pages={
          8257-64
        }
}
The use of HCl during growth of nanowires presents new possibilities for controlling the growth dynamics and resulting nanowire properties. In this paper, we investigate the effects of in situ HCl on the growth of Au-seeded GaAs nanowires in a growth regime where both wurtzite and zinc blende crystal structures are possible to achieve. We find that HCl changes the crystal structure of the nanowires from pure wurtzite to defect-free zinc blende. By comparing the growth of wurtzite-zinc blende… CONTINUE READING

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In-situ monitoring of arsenic-phosphorus exchange in MOVPE growth of InGaAs/InP quantum wells by kinetic ellipsometry