Cryogenic performance of a 200 GHz SiGe HBT technology

@article{Banerjee2003CryogenicPO,
  title={Cryogenic performance of a 200 GHz SiGe HBT technology},
  author={Baskar Banerjee and S. Venkataraman and Yuan Lu and S. Nuttinck and Deukhyoun Heo and Y.-J.E. Chen and J. D. Cressler and J. Laskar and G. Freeman and D. Ahlgren},
  journal={2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440)},
  year={2003},
  pages={171-173}
}
The cryogenic performance of a 200 GHz SiGe HBT technology is presented for the first time. Measurements of the current-voltage, small-signal ac, and broadband noise characteristics of a 200 GHz SiGe HBT was made at 85K, 150K, 200K and 300K. At 85K, these SiGe HBTs maintain excellent dc ideality, with a peak current gain of 3800, a peak cut-off frequency of 250 GHz, and a minimum noise figure of approximately 0.30 dB at a frequency of 14 GHz, and in all cases represent improvements over their… CONTINUE READING

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