Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

@article{Bohuslavskyi2019CryogenicSS,
  title={Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening},
  author={Heorhii Bohuslavskyi and A. G. M. Jansen and Sylvain Barraud and V. Barral and Mika{\"e}l Casse and L. Le Guevel and Xavier Jehl and Louis Hutin and Beno{\^i}t Bertrand and G{\'e}rard Billiot and G. Pillonnet and Fabien Arnaud and P. Galy and Silvano de Franceschi and Maud Vinet and Marc Sanquer},
  journal={IEEE Electron Device Letters},
  year={2019},
  volume={40},
  pages={784-787}
}
  • Heorhii Bohuslavskyi, A. G. M. Jansen, +13 authors Marc Sanquer
  • Published in IEEE Electron Device Letters 2019
  • Chemistry, Physics
  • In the standard MOSFET description of the drain current <inline-formula> <tex-math notation="LaTeX">$ {I}_{{D}}$ </tex-math></inline-formula> as a function of applied gate voltage <inline-formula> <tex-math notation="LaTeX">$ {V}_{{ {GS}}}$ </tex-math></inline-formula>, the subthreshold swing <inline-formula> <tex-math notation="LaTeX">${{SS(T)}}\equiv {{dV}}_{{{GS}}}/ {d}\log {I}_{ {D}}$ </tex-math></inline-formula> has a fundamental lower limit as a function of temperature <inline-formula… CONTINUE READING

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