# Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

@article{Bohuslavskyi2018CryogenicCO, title={Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization}, author={Heorhii Bohuslavskyi and Sylvain Barraud and V. Barral and Mika{\"e}l Cass{\'e} and L. Le Guevel and Louis Hutin and Benoit Bertrand and Alessandro Crippa and Xavier Jehl and Ga{\"e}l Pillonnet and Aloysius G. M. Jansen and Franck Arnaud and Philippe Galy and Romain Maurand and Silvano de Franceschi and Marc Sanquer and Maud Vinet}, journal={IEEE Transactions on Electron Devices}, year={2018}, volume={65}, pages={3682-3688} }

Extensive electrical characterization of ring oscillators (ROs) made in high-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (<inline-formula> <tex-math notation="LaTeX">$\tau _{P}$ </tex-math></inline-formula>), static current (<inline-formula> <tex-math notation="LaTeX">${I} _{\textsf {STAT}}$ </tex-math></inline…

## 21 Citations

### Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

- Computer ScienceIEEE Electron Device Letters
- 2019

An original explanation of the saturation of SS(T) in 28 nm fully-depleted silicon-on-insulator (FD-SOI) devices for both n- and p-type MOSFETs of different gate oxide thicknesses and gate lengths down to 4 K is presented.

### Characterization of 0.18{\mu}m CMOS Ring Oscillator at Liquid Helium Temperature

- Physics, Engineering
- 2019

This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18{\mu}m CMOS technology at liquid helium…

### Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

- PhysicsIEEE Transactions on Electron Devices
- 2019

Self-heating in fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is experimentally studied using the gate resistance thermometry technique, in…

### Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

- Engineering
- 2021

The wide range of cryogenic applications, such as spatial, high performance computing or high-energy physics, has boosted the investigation of CMOS technology performance down to cryogenic…

### 0.18μm CMOS Ring Oscillator at Liquid Helium Temperature

- Physics, Engineering2019 IEEE 3rd International Conference on Circuits, Systems and Devices (ICCSD)
- 2019

This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18μm CMOS technology at liquid helium…

### Cryo-CMOS Band-gap Reference Circuits for Quantum Computing

- Physics
- 2019

The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the…

### Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

- Engineering2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
- 2020

Mismatch performance of 28 nm FDSOI technology is electrically characterized at low temperatures using integrated on-chip addressing for a matrix of transistors. The first statistical results ever…

### Cryogenic electronics and quantum dots on silicon-on-insulator for quantum computing

- Physics
- 2018

This thesis studies cryogenic electronics and quantum dots on silicon-on-insulator (SOI) for quantum computing. Different types of electron and hole quantum dots are fabricated with Leti's SOI…

### Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

- Physics
- 2021

### Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

- Physics, EngineeringIEEE Transactions on Electron Devices
- 2020

In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low temperature (typically < 20 K) when back gate…

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