Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

@article{Bohuslavskyi2018CryogenicCO,
  title={Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization},
  author={Heorhii Bohuslavskyi and Sylvain Barraud and V. Barral and Mika{\"e}l Cass{\'e} and L. Le Guevel and Louis Hutin and Benoit Bertrand and Alessandro Crippa and Xavier Jehl and Ga{\"e}l Pillonnet and Aloysius G. M. Jansen and Franck Arnaud and Philippe Galy and Romain Maurand and Silvano de Franceschi and Marc Sanquer and Maud Vinet},
  journal={IEEE Transactions on Electron Devices},
  year={2018},
  volume={65},
  pages={3682-3688}
}
Extensive electrical characterization of ring oscillators (ROs) made in high-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (<inline-formula> <tex-math notation="LaTeX">$\tau _{P}$ </tex-math></inline-formula>), static current (<inline-formula> <tex-math notation="LaTeX">${I} _{\textsf {STAT}}$ </tex-math></inline… 

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