Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

@article{Bohuslavskyi2018CryogenicCO,
  title={Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization},
  author={Heorhii Bohuslavskyi and Sylvain Barraud and V. Barral and Mika{\"e}l Casse and L. Le Guevel and Louis Hutin and Beno{\^i}t Bertrand and Alessandro Crippa and Xavier Jehl and G. Pillonnet and A. G. M. Jansen and Franck Arnaud and P. Galy and R. Maurand and Silvano de Franceschi and Marc Sanquer and Maud Vinet},
  journal={IEEE Transactions on Electron Devices},
  year={2018},
  volume={65},
  pages={3682-3688}
}
  • Heorhii Bohuslavskyi, Sylvain Barraud, +14 authors Maud Vinet
  • Published in
    IEEE Transactions on Electron…
    2018
  • Physics
  • Extensive electrical characterization of ring oscillators (ROs) made in high-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (<inline-formula> <tex-math notation="LaTeX">$\tau _{P}$ </tex-math></inline-formula>), static current (<inline-formula> <tex-math notation="LaTeX">${I} _{\textsf {STAT}}$ </tex-math></inline… CONTINUE READING

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    Citations

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    0.18μm CMOS Ring Oscillator at Liquid Helium Temperature

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    Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

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