• Corpus ID: 51682431

Critical Strain for Surface Nucleation of Dislocations in Silicon

@article{Zhang2018CriticalSF,
  title={Critical Strain for Surface Nucleation of Dislocations in Silicon},
  author={Xiaohan Zhang and Wei Cai},
  journal={arXiv: Applied Physics},
  year={2018}
}
A long-standing discrepancy exists between experiments and atomistic models concerning the critical strain needed for surface nucleation of dislocations in silicon-germanium systems. While dislocation nucleation is readily observed in hetero-epitaxial thin films with misfit strains less than 4%, existing atomistic models predict that a critical strain over 7.8% is needed to overcome the kinetic barrier for dislocation nucleation. Using zero-temperature energy barrier calculations and finite… 
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