Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET.

@article{Sato2017CriticalBI,
  title={Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET.},
  author={Yoshiaki Sato and Yoshitaka Kawasugi and Masayuki Suda and Hiroshi M. Yamamoto and Reizo Kato},
  journal={Nano letters},
  year={2017},
  volume={17 2},
  pages={
          708-714
        }
}
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator κ-(BEDT-TTF)2CuN(CN)2Cl (κ-Cl). The FET shows a continuous metal-insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in… 
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