Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling

@article{Liang1983CreationAT,
  title={Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling},
  author={M. Liang and C. M. Chang and Y. T. Yeow and Cong Hu and R. Brodersen},
  journal={IEEE Electron Device Letters},
  year={1983},
  volume={4},
  pages={350-352}
}
Deep depletion in both p-type and n-type substrates can be induced by minority carriers tunneling away from the substrate. When this occurs, tunneling current becomes saturated at the rate of carrier generation in the substrate, with the excess applied voltage dropped across the deep-depletion region. We present a quantitative model for this phenomenon based on balancing the tunneling current and the space-charge generation current. Conversely, the usual transient deep depletion in n-type… CONTINUE READING

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