Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

@article{Azcatl2016CovalentND,
  title={Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.},
  author={Angelica Azcatl and Xiaoye Qin and A. Prakash and Chenxi Zhang and Lanxia Cheng and Qingxiao Wang and Ning Lu and Moon J. Kim and Jiyoung Kim and Kyeongjae Cho and Rafik Addou and Christopher L. Hinkle and Joerg Appenzeller and Robert M. Wallace},
  journal={Nano letters},
  year={2016},
  volume={16 9},
  pages={
          5437-43
        }
}
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homojunctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is… Expand
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References

SHOWING 1-10 OF 47 REFERENCES
Manganese Doping of Monolayer MoS2: The Substrate Is Critical.
TLDR
It is shown that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations preclude Mn incorporation and merely lead to defective MoS 2. Expand
p-type doping of MoS2 thin films using Nb
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2. Niobium was found to act as an efficient acceptor up toExpand
Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.
TLDR
Stable p-type conduction in MoS2 is demonstrated by substitutional niobium (Nb) doping, leading to a degenerate hole density of ∼ 3 × 10(19) cm(-3), and it is expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity. Expand
In-situ and tunable nitrogen-doping of MoS2 nanosheets
TLDR
The successful synthesis of nitrogen-doped MoS2 nanosheets by a simple, effective and large-scale approach shows a porous structure formed by curled and overlapped nanosheeets with well-defined edges. Expand
Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.
TLDR
A CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2 is reported, with physical characterization using SIMS, AFM, XRD and Raman techniques used to identify process conditions with reduced lattice defects as well as low surface damage and etching. Expand
Air-stable surface charge transfer doping of MoS₂ by benzyl viologen.
TLDR
Benzyl viologen (BV), which has one of the highest reduction potentials of all electron-donor organic compounds, is demonstrated as a surface charge transfer donor for MoS2 flakes, exhibiting excellent stability in both ambient air and vacuum. Expand
Defect-dominated doping and contact resistance in MoS2.
TLDR
It is found that intrinsic defects in MoS2 dominate the metal/MoS2 contact resistance and provide a low Schottky barrier independent of metal contact work function. Expand
Functionalization of monolayer MoS2 by substitutional doping: A first-principles study
Abstract Electron-beam mediated substitutional doping of monolayer MoS2 was recently demonstrated, opening a new way to modify its properties. Using first-principles calculations, the structural,Expand
Control of work function of graphene by plasma assisted nitrogen doping
Nitrogen doping is expected to provide several intriguing properties to graphene. Nitrogen plasma treatment to defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causesExpand
Strain engineering of selective chemical adsorption on monolayer MoS2.
TLDR
New findings from ab inito calculations are revealed that reveal substantially enhanced adsorption of NO and NH3 on strained monolayer MoS2 with significant impact on the properties of the adsorbates and theMoS2 layer. Expand
...
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2
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5
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