• Corpus ID: 119367480

Coulomb drag transistor via graphene/MoS2 heterostructures

@article{Jin2017CoulombDT,
  title={Coulomb drag transistor via graphene/MoS2 heterostructures},
  author={Youngjo Jin and Min-Kyu Joo and Byoung Hee Moon and Hyun Jung Kim and Sanghyup Lee and Hye Yun Jeong and Hyo Yeol Kwak and Young Hee Lee},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2017}
}
Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag interaction at a graphene/MoS2 (GM) heterointerface. The ideal van der Waals distance allows strong… 
2 Citations

Figures from this paper

Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions.

Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces.

Epitaxial Single‐Crystal Growth of Transition Metal Dichalcogenide Monolayers via the Atomic Sawtooth Au Surface

Growth using the atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, and provides a general avenue for the SC growth of diatomic van der Waals heterostructures on a wafer scale, to further facilitate the applications of TMdCs in post-silicon technology.

References

SHOWING 1-10 OF 31 REFERENCES

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.

Strong Coulomb drag and broken symmetry in double-layer graphene

C oulomb drag is a frictional coupling between electric currents flowing in spatially separated conducting layers. It is caused by interlayer electron‐electron interactions. Previously, only the

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

This paper demonstrates a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition, and provides a systematic comparison of the graphene/MoS 2 heterojunction contact to more traditional MoS2-metal junctions.

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

This work demonstrates field-effect transistors with MoS2 channels, hBN dielectric, and graphene gate electrodes, and takes advantage of the mechanical strength and flexibility of these materials to create flexible and transparent FETs that show unchanged performance up to 1.5% strain.

Mobility engineering and a metal-insulator transition in monolayer MoS₂.

Electrical transport measurements on MoS₂ FETs in different dielectric configurations are reported, showing clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectrics and a weaker than expected temperature dependence.

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

It is reported that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 1011 cm-2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density.

Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio.

By utilizing the band-gap-opened bilayer graphene, excellent nonvolatile memory switching behavior was demonstrated with a clear program/erase state by applying pulse gate bias.

Phase patterning for ohmic homojunction contact in MoTe2

Laser-induced phase patterning is used to fabricate an ohmic heterophase homojunction between semiconducting hexagonal and metallic monoclinic molybdenum ditelluride that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 106.

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

It is demonstrated that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200-300 Ω μm at zero gate bias.

Boron nitride substrates for high-quality graphene electronics.

Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).