Corrigendum to “Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors” [Mat. Des. 148(2018) 1–7]

@inproceedings{Zhang2019CorrigendumT,
  title={Corrigendum to “Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors” [Mat. Des. 148(2018) 1–7]},
  author={Dongliang Zhang and Xinhong Cheng and Li Wei Zheng and Lingyan Shen and Qian Wang and Ziyue Gu and Ru Nan Qian and Dengpeng Wu and Wen Zhou and Duo Cao and Yuehui Yu},
  year={2019}
}

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