• Corpus ID: 119225626

Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision

  title={Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision},
  author={Xuezeng Tian and Dennis S. Kim and Shi-ze Yang and Christopher J. Ciccarino and Yongji Gong and Yongsoo Yang and Yao Yang and Blake Duschatko and Yakun Yuan and Pulickel M. Ajayan and Juan Carlos Idrobo and Prineha Narang and Jianwei Miao},
  journal={arXiv: Materials Science},
The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bond distortion and local strain tensor induced by single dopants for the first time. By directly… 

Figures from this paper

Quantum defects by design
Abstract Optically active point defects in wide-bandgap crystals are leading building blocks for quantum information technologies including quantum processors, repeaters, simulators, and sensors.
Advances in quantum light emission from 2D materials
Abstract Two-dimensional (2D) materials are being actively researched due to their exotic electronic and optical properties, including a layer-dependent bandgap, a strong exciton binding energy, and
Observing crystal nucleation in four dimensions using atomic electron tomography
The experimental and molecular dynamics results indicate that a theory beyond classical nucleation theory is needed to describe early-stage nucleation at the atomic scale, and it is anticipated that the reported approach will open the door to the study of many fundamental problems in materials science, nanoscience, condensed matter physics and chemistry.
Scanning Transmission Electron Microscopy (STEM) Study on Novel Two-dimensional Materials
  • Shi-ze Yang
  • Materials Science
    Microscopy and Microanalysis
  • 2020
Two-dimensional materials with typical characteristics of atomic layer thickness, weak inter layer Van de Walls interaction and large surface areas are emerging superstar for materials science,


Atomic electron tomography: 3D structures without crystals
The combination of AET and atom-tracing algorithms has enabled the determination of the coordinates of individual atoms and point defects in materials with a 3D precision, allowing direct measurements of 3D atomic displacements and the full strain tensor.
Three-dimensional coordinates of individual atoms in materials revealed by electron tomography.
The ability to precisely localize the 3D coordinates of individual atoms in materials without assuming crystallinity is expected to find important applications in materials science, nanoscience, physics, chemistry and biology.
Deciphering chemical order/disorder and material properties at the single-atom level
This work combines 3D atomic structure determination of crystal defects with DFT calculations, which is expected to advance the understanding of structure–property relationships at the fundamental level.
Revealing the 3D structure of graphene defects
We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images
Intrinsic structural defects in monolayer molybdenum disulfide.
The atomic scale study of structural defects presented here brings new opportunities to tailor the properties of MoS2 via controlled synthesis and defect engineering.
Three-dimensional elemental mapping at the atomic scale in bimetallic nanocrystals.
This work combines statistical parameter estimation theory with compressive sensing based tomography to determine the positions and atom type of each atom in heteronanostructures in core-shell Au@Ag nanorods.
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide.
Recent progress in large-area synthesis of monolayer molybdenum disulphide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics.
Direct imaging of lattice atoms and topological defects in graphene membranes.
Multiple five- and seven-membered rings appear exclusively in combinations that avoid dislocations and disclinations, in contrast to previous observations on highly curved (tube- or fullerene-like) graphene surfaces.
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
Annular dark-field imaging in an aberration-corrected scanning transmission electron microscope optimized for low voltage operation can resolve and identify the chemical type of every atom in monolayer hexagonal boron nitride that contains substitutional defects.
Formation of bimetallic clusters in superfluid helium nanodroplets analysed by atomic resolution electron tomography
Atomic resolution electron tomography on silver/gold core/shell nanoclusters grown in superfluid helium nanodroplets reveals morphology and composition of a cluster identifying gold- and silver-rich regions in three dimensions and estimates atomic positions without using any prior information and with minimal filtering.