Correlated Nonideal Effects of Dark and Light I–V Characteristics in a-Si/c-Si Heterojunction Solar Cells

@article{Chavali2014CorrelatedNE,
  title={Correlated Nonideal Effects of Dark and Light I–V Characteristics in a-Si/c-Si Heterojunction Solar Cells},
  author={Raghu Vamsi Krishna Chavali and John R. Wilcox and B. Ray and Jeffery Lynn Gray and Muhammad Ashraful Alam},
  journal={IEEE Journal of Photovoltaics},
  year={2014},
  volume={4},
  pages={763-771}
}
a-Si/c-Si (amorphous Silcon/crystalline Silicon) heterojunction solar cells exhibit several distinctive dark and light I-V nonideal features. The dark I-V of these cells exhibits unusually high ideality factors at low forward-bias and the occurrence of a “knee” at medium forward-bias. Nonidealities under illumination, such as the failure of superposition and the occurrence of an “S-type” curve, are also reported in these cells. However, the origin of these nonidealities and how the dark I-V… 
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References

SHOWING 1-10 OF 40 REFERENCES
Electrical transport mechanisms in a-Si:H/c-Si heterojunction solar cells
We present temperature-dependent measurements of I-V curves in the dark and under illumination in order to elucidate the dominant transport mechanisms in amorphous silicon-crystalline silicon
Investigation of hetero-interface and junction properties in silicon heterojunction solar cells
The amorphous silicon (a-Si:H) - crystalline silicon (c-Si) heterojunction (SHJ) solar cell fill factor (FF) is very sensitive to the properties of c-Si surface, process parameters of thin a-Si:H
Universality of non-ohmic shunt leakage in thin-film solar cells
We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells,
A diagnostic tool for analyzing the current-voltage characteristics in a-Si/c-Si heterojunction solar cells
Understanding the effects of device parameters on carrier transport is essential for the design of high efficiency aSi/c-Si heterojunction solar cells. It is well known that the dark current-voltage
Electrical properties of n-amorphous/p-crystalline silicon heterojunctions
We have measured C‐V characteristics and temperature dependence of J‐V characteristics of undoped hydrogenated amorphous silicon (a‐Si:H) heterojunctions formed on p‐type crystalline silicon ( p
Temperature Dependence of Amorphous/Crystalline Silicon Heterojunction Solar Cells
We evaluated the conduction mechanisms and temperature dependence of HIT (heterojunction with intrinsic thin layer) structure solar cells while changing the thickness of the undoped amorphous silicon
Effect of Process Parameter Variation in Deposited Emitter and Buffer Layers on the Performance of Silicon Heterojunction Solar Cells
Heterostuctures of amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) were investigated with special emphasis on the effect of emitter [p (a-Si:H)] and buffer layer [i (a-Si:H)]
On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si:H p-i-n solar cells and show that it is characterized by
High‐forward‐bias transport mechanism in a‐Si:H/c‐Si heterojunction solar cells
In order to elucidate the transport mechanism in a‐Si:H/c‐Si heterojunction solar cells under high forward bias (U > 0.5 V), we conducted temperature‐dependent measurements of current–voltage (I–V)
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