Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-( Ga , Al ) As Quantum Wells : Effects of Applied Electric and In-Plane Magnetic Fields

The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1−xAlxAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic… CONTINUE READING