Correction to Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.

Abstract

In our paper, we provided an upper bound for the relaxation from the 1s (T2) excited state to the ground state, ΓES. This was determined from our estimation that the drain to ground state fast tunnel barrier, ΓD, was equal to 162 GHz. We have now realized that in Figure 5g of the paper, where the transport mechanisms that allowed the observation of the… (More)
DOI: 10.1021/acsnano.6b08154

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