Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission.

@article{Moewe2009CoreshellIQ,
  title={Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission.},
  author={Michael Moewe and Linus C. Chuang and Shanna Crankshaw and Kar Wei Ng and Connie J Chang-Hasnain},
  journal={Optics express},
  year={2009},
  volume={17 10},
  pages={
          7831-6
        }
}
In(x)Ga(1-x)As wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition. The nanoneedles assume a 6 degrees - 9 degrees tapered shape, have sharp 2-5 nm tips, are 4 microm in length and 600 nm wide at the base. The micro-photoluminescence peaks exhibit redshifts corresponding to their increased indium incorporation. Core-shell InGaAs/GaAs layered quantum well structures are grown which… CONTINUE READING

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