Copper filling process for small diameter, high aspect ratio Through Silicon Via (TSV)

@article{Wei2012CopperFP,
  title={Copper filling process for small diameter, high aspect ratio Through Silicon Via (TSV)},
  author={Tiwei Wei and Jian Cai and Qian Wang and Ziyu Liu and Yinan Li and Tao Wang and Dejun Wang},
  journal={2012 13th International Conference on Electronic Packaging Technology & High Density Packaging},
  year={2012},
  pages={483-487}
}
3D Integration is a good solution for extending Moore's momentum in the next decennium. Through Silicon Via (TSV) is an alternative interconnect technology for higher performance system integration with vertical stacking of chips in package. Due to high demands of chip miniaturization, small diameter TSV with high aspect ratio has become particularly important. This paper focuses on Cu electroplating via filling of small diameter, high aspect ratio TSV. Samples of different via diameters under… CONTINUE READING

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