Conversion of silicon carbide to crystalline diamond-structured carbon at ambient pressure

@article{Gogotsi2001ConversionOS,
  title={Conversion of silicon carbide to crystalline diamond-structured carbon at ambient pressure},
  author={Yury Gogotsi and Sascha J. Welz and Daniel A. Ersoy and Michael J. Mcnallan},
  journal={Nature},
  year={2001},
  volume={411},
  pages={283-287}
}
Synthetic diamond is formed commercially using high-pressure, chemical-vapour-deposition and shock-wave processes, but these approaches have serious limitations owing to low production volumes and high costs. Recently suggested alternative methods of diamond growth include plasma activation, high pressures, exotic precursors or explosive mixtures, but they suffer from very low yield and are intrinsically limited to small volumes or thin films. Here we report the synthesis of nano- and micro… CONTINUE READING
BETA

Citations

Publications citing this paper.
SHOWING 1-10 OF 19 CITATIONS

Similar Papers

Loading similar papers…