Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

@article{Kim2001ConventionalNM,
  title={Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode},
  author={Yudong Kim and G. Gebara and M. B. Freiler and Joel Barnett and Daniel Riley and Jia Jie Chen and Kirvis Torres and JaeEun Lim and Barney Foran and Frederick F Shaapur and Alpana Agarwal and P. S. Lysaght and G. Brown and C. D. Young and Swarnal Borthakur and Hong-Jyh Li and B. Nguyen and P. Zeitzoff and Gennadi Bersuker and D. Derro and R. Bergmann and R. Murto and Alin Hou and H. Bruce Huff and E. Shero and C. Pomarede and M. Givens and M. Mazanez and C. Werkhoven},
  journal={International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)},
  year={2001},
  pages={20.2.1-20.2.4}
}
Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000/spl deg/C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO/sub 2//poly-Si transistor… CONTINUE READING
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