Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

@article{Wang2021ControllingRD,
  title={Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering},
  author={Anran Wang and Yuhan Wang and Jianfei Li and Ningan Xu and Songlin Li and Xinran Wang and Yi Shi and Fengqiu Wang},
  journal={Applied Physics Letters},
  year={2021},
  volume={118},
  pages={121104}
}
Transition metal dichalcogenides (TMDs) are known to support complex excitonic states. Revealing the differences in relaxation dynamics among different excitonic species and elucidating the transition dynamics between them may provide important guidelines for designing novel excitonic devices. Combining photoluminescence and reflectance contrast measurements with ultrafast pump-probe spectroscopy at cryogenic temperatures, we herein study the relaxation dynamics of neutral and charged excitons… Expand

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References

SHOWING 1-10 OF 37 REFERENCES
Tailoring exciton dynamics of monolayer transition metal dichalcogenides by interfacial electron-phonon coupling
With their strong light-matter interaction and rich photo-physics, two-dimensional (2D) transition metal dichalcogenides (TMDs) are important candidates for novel photonic and spin-valleytronicExpand
Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2.
TLDR
This work uses femtosecond transient absorption spectroscopy to monitor the relaxation dynamics of single-layer MoS2 over the entire visible range, and finds that, irrespective of excitation photon energy, the transient absorption spectrum shows the simultaneous bleaching of all excitonic transitions and corresponding red-shifted photoinduced absorption bands. Expand
Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2
Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electronExpand
Ultrafast free carrier dynamics in black phosphorus–molybdenum disulfide (BP/MoS2) heterostructures
Free photocarriers in a BP/MoS2 type-II vdW heterostructure were found to undergo a usually fast (∼5 ps) Langevin interlayer recombination process.
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor.
TLDR
The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs. Expand
Charge-tuneable biexciton complexes in monolayer WSe2
TLDR
Experimental evidence of four- and five-particle biexciton complexes in monolayer WSe2 and their electrical control are reported and offer direct routes towards deterministic control in many-body quantum phenomena. Expand
Electrical control of neutral and charged excitons in a monolayer semiconductor.
TLDR
This work reports the unambiguous observation and electrostatic tunability of charging effects in positively charged, neutral and negatively charged excitons in field-effect transistors via photoluminescence and finds the charging energies for X(+) and X(-) to be nearly identical implying the same effective mass for electrons and holes. Expand
Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2, and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visibleExpand
Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
TLDR
It is shown that the photoluminescence quantum yield of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Expand
Ultrafast dynamics of defect-assisted electron-hole recombination in monolayer MoS2.
TLDR
A model for carrier recombination dynamics that quantitatively explains all features of the data for different temperatures and pump fluences is presented and underscores the important role played by Auger processes in two-dimensional atomic materials. Expand
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