Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth

@inproceedings{Eichfeld2016ControllingNO,
  title={Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth},
  author={Sarah M. Eichfeld and V{\'i}ctor Oliveros Colon and Yifan Nie and Kyeongjae Cho and Joshua J. Robinson},
  year={2016}
}
Tungsten diselenide (WSe2) is a semiconducting, two-dimensional (2D) material that has gained interest in the device community recently due to its electronic properties. The synthesis of atomically thin WSe2, however, is still in its infancy. In this work we elucidate the requirements for large selenium/tungsten precursor ratios and explain the effect of nucleation temperature on the synthesis of WSe2 via metal-organic chemical vapor deposition (MOCVD). The introduction of a nucleation-step… CONTINUE READING