• DOI:10.1021/nl303081m
• Corpus ID: 15082986

Controlling a nanowire quantum dot band gap using a straining dielectric envelope.

@article{BouwesBavinck2012ControllingAN,
  title={Controlling a nanowire quantum dot band gap using a straining dielectric envelope.},
  author={Maaike Bouwes Bavinck and Michał Zieliński and B. J. Witek and Tilman Zehender and Erik P. A. M. Bakkers and Val Zwiller},
  journal={Nano letters},
  year={2012},
  volume={12 12},
  pages={
          6206-11
        }
}

• Maaike Bouwes Bavinck, M. Zieliński, +3 authors V. Zwiller
• Published 12 November 2012
• Physics
• Nano letters

We tune the emission wavelength of an InAsP quantum dot in an InP nanowire over 200 meV by depositing a SiO(2) envelope using plasma-enhanced chemical vapor deposition without deterioration of the optical quality. This SiO(2) envelope generates a controlled static strain field. Both red and blue shift can be easily achieved by controlling the deposition conditions of the SiO(2). Using atomistic empirical tight-binding calculations, we investigate the effect of strain on a quantum dot band structure for different compositions, shape, and crystal orientations. From the calculations, we estimate the applied strain in our experiment. This enables engineering of the band gap in nanowires with unprecedented possibilities to extend the application range of nanowire devices.