Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.

@article{Hou2009ControlledSD,
  title={Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.},
  author={Wen Chi Hou and Franklin Chau-Nan Hong},
  journal={Nanotechnology},
  year={2009},
  volume={20 5},
  pages={
          055606
        }
}
This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and… CONTINUE READING
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