Controlled pulse-etching with xenon difluoride

  title={Controlled pulse-etching with xenon difluoride},
  author={Patrick B. Chu and J.-T. Chen and Roger Yeh and G. Lin and Jcm Huang and Brett Warneke and S.J. Pister},
  journal={Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)},
  pages={665-668 vol.1}
  • P. Chu, J. Chen, +4 authors S.J. Pister
  • Published 1997
  • Materials Science
  • Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)
A gas-phase, room-temperature, plasmaless isotropic etching system has been used for bulk and thin film silicon etching. A computer controlled multi-chambered etcher is used to provide precisely metered pulses of xenon difluoride (XeF/sub 2/) gas to the etch chamber. Etch rates as high as 15 microns per minute have been observed. The etch appears to have infinite selectivity to many common thin films, including silicon dioxide, silicon nitride, photoresist, and aluminum. The etch rate, profile… Expand
Gas phase pulse etching of silicon for MEMS with xenon difluoride
An inexpensive, small, vacuum system is described for 'pulse etching' single crystal silicon wafers (standard CMOS substrates) for releasing microelectromechanical systems (MEMS) devices. Expand
The behaviour of continuous flow xenon difluoride etching of silicon
The characterisation of silicon etching by xenon difluoride is discussed along with the presentation of process behaviours of etch parameters. Selectivity towards key semiconductor and MEMS materialsExpand
Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride
Xenon Difluoride is an isotropic dry etch which is increasingly being used to release structures made of polysilicon. By using a vapor-phase XeF/sub 2/ pulse etching system we have investigated theExpand
Undercut Compensation for Xenon Difluoride Etching of Polysilicon Thin-films
This paper presents a new undercut compensation etch technique that provides better control over lateral undercutting of polysilicon thin-films using xenon difluoride (XeF2) vapour as the etchant. AExpand
Isotropic etching of silicon in fluorine gas for MEMS micromachining
Etching of silicon with molecular fluorine for the micromachining of micro electro mechanical systems (MEMS) has been evaluated. The etching process is carried out in a continuous flow etching systemExpand
Deep etching of silicon with XeF/sub 2/ gas
  • B. Bahreyni, C. Shafai
  • Computer Science
  • IEEE CCECE2002. Canadian Conference on Electrical and Computer Engineering. Conference Proceedings (Cat. No.02CH37373)
  • 2002
This paper presents results of silicon etching using XeF/sub 2/ gas, and good agreement was found between the simulated profiles and the actual measured etch profiles at the mean free path of Xef/ sub 2/ etching pressures. Expand
Determination of etching parameters for pulsed XeF 2 etching of silicon using chamber pressure data
A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The onlyExpand
Vapor Phase Etch Processes for Silicon MEMS
While there are a number of different “dry” process technologies that can be utilized to release MEMS structures, including plasma-based isotropic etching using SF6 (non-Bosch process) forExpand
Bulk micromachining of silicon
Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the moreExpand
XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices
This paper presents characterization of the effects of XeF2 vapor phase etching conditions on the lateral etch rate and etch uniformity of a sacrificial, epitaxial Nb2N layer grown between a III-NExpand


Gas-phase silicon micromachining with xenon difluoride
  • Floy I. Chang, R. Yeh, +5 authors M. Hecht
  • Materials Science, Engineering
  • Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components
  • 1995
Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists,Expand
The etching of silicon with XeF2 vapor
It is shown that silicon is isotropically etched by exposure to XeF2(gas) at T=300 K. Si etch rates as large as 7000 A/min were observed for P (XeF2) <1.4×10−2 Torr and the etch rate varies linearlyExpand
Plasmaless dry etching of silicon with fluorine‐containing compounds
Silicon is rapidly etched by the gas‐phase halogen fluorides ClF3, BrF3, BrF5, and IF5, in analogy to XeF2 etching silicon. Nearly complete selectivity over SiO2 is achieved in all cases. ByExpand
Comparison of XeF2 and F‐atom reactions with Si and SiO2
Silicon gasification by XeF2 is compared with F‐atom etching under conditions typical of those used in plasma etching. Temperatures ranged from −17 to 360 °C and XeF2 pressures were between 0.05 andExpand
A reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects
The gas‐phase etch products of silicon and XeF2 have been studied as a function of doping and XeF2 flux using molecular beam mass‐phase spectrometry. In this experiment the product flux, not theExpand
Si/XeF2 etching: Temperature dependence
The temperature dependence of the Si(100)/XeF2 etch reaction is studied quantitatively in a molecular beam setup. At a sample temperature of 150 K the reaction probability reaches unity initially,Expand
A novel x‐ray photoelectron spectroscopy study of the Al/SiO2 interface
We report on the first nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films. Both x‐ray photoelectron spectroscopy (XPS)Expand
Gaseous products from the reaction of XeF2 with silicon
XeF2 was reacted with silicon, and the gaseous products were detected using modulation techniques which made the experiments sensitive only to products which had not collided with a wall. InExpand
however (for it was the literal soul of the life of the Redeemer, John xv. io), is the peculiar token of fellowship with the Redeemer. That love to God (what is meant here is not God’s love to men)Expand
Journal of Vac. Sci. Technol. A
  • Journal of Vac. Sci. Technol. A
  • 1996