Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure.

@article{Zheng2018ControlledLO,
  title={Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure.},
  author={Xiaoming Zheng and Yuehua Wei and Chuyun Deng and Han Huang and Yayun Yu and Guang Wang and Gang Peng and Zhi Hong Zhu and Yi Zhang and Tian Jiang and Shiqiao Qin and Renyan Zhang and Xueao Zhang},
  journal={ACS applied materials \& interfaces},
  year={2018},
  volume={10 36},
  pages={
          30045-30050
        }
}
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoO x oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoO x-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and… Expand
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