Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires.

@article{Bayogan2020ControllablePJ,
  title={Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires.},
  author={Janice Ruth Bayogan and Kidong Park and Zhuo Bin Siu and Sung Jin An and Chiu-Chun Tang and Xiao-Xiao Zhang and Man Suk Song and Jeunghee Park and Mansoor B. A. Jalil and Naoto Nagaosa and Kazuhiko Hirakawa and Christian Schoenenberger and Jungpil Seo and Minkyung Jung},
  journal={Nanotechnology},
  year={2020}
}
We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In these… 
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