Controllable p‐Type Doping of 2D WSe 2 via Vanadium Substitution

@article{Kozhakhmetov2021ControllablePD,
  title={Controllable p‐Type Doping of 2D WSe
 2
 via Vanadium Substitution},
  author={Azimkhan Kozhakhmetov and Samuel Stolz and Anne Marie Z. Tan and Rahul Pendurthi and Saiphaneendra Bachu and Furkan Turker and Nasim Alem and Jessica S. Kachian and Saptarshi Das and Richard G. Hennig and Oliver Gr{\"o}ning and Bruno Schuler and Joshua A. Robinson},
  journal={Advanced Functional Materials},
  year={2021}
}
Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400 °C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms… Expand

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