Control of structural defects in group III?V?N alloys grown on Si

@inproceedings{Yonezu2002ControlOS,
  title={Control of structural defects in group III?V?N alloys grown on Si},
  author={Hiroo Yonezu},
  year={2002}
}
  • Hiroo Yonezu
  • Published 2002
  • Chemistry
  • The key issues for growing III–V compound layers, free of structural defects, on Si substrates are clarified. The technologies for overcoming the fundamental problems have been developed. As a result, it has been clarified that dislocation-free III–V–N alloys can be grown on Si substrates whose lattice constants are matched to those of Si. Device structures of the GaAsPN/GaPN quantum well structure and the Si/GaPN/Si structure have been successfully grown on a Si (100) substrate covered with a… CONTINUE READING

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