Control of graphene field-effect transistors by interfacial hydrophobic self-assembled monolayers.

@article{Lee2011ControlOG,
  title={Control of graphene field-effect transistors by interfacial hydrophobic self-assembled monolayers.},
  author={Wi Hyoung Lee and Jaesung Park and Youngsoo Kim and Kwang Su Kim and Byung Hee Hong and Kilwon Cho},
  journal={Advanced materials},
  year={2011},
  volume={23 30},
  pages={3460-4}
}
Graphene has received considerable attention as a potential alternative material for use in next-generation semiconductor technology. [ 1 , 2 ] Since its discovery, graphene-based electronic devices have been fabricated on SiO 2 /Si substrates to take advantage of the optical contrast between the monolayer graphene and SiO 2 and because of the ease of fabrication of devices with metal-oxide-semiconductor (MOS) structures. [ 3 ] 
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Nature Experimental Section Materials and device fabrication : OTS and ODTSSAMs were fabricated on SiO 2 / Si substrates following the procedure reported in the literature

S. V. Dubonos, A. A. Firsov
Science • 2004

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