Control of defect-mediated tunneling barrier heights in ultrathin MgO films

@article{Kim2010ControlOD,
  title={Control of defect-mediated tunneling barrier heights in ultrathin MgO films},
  author={D. Kim and W. S. Choi and F. Schleicher and R. H. Shin and S. Boukari and V. Davesne and C. Kieber and J. Arabski and G. Schmerber and E. Beaurepaire and W. Jo and M. Bowen},
  journal={Applied Physics Letters},
  year={2010},
  volume={97},
  pages={263502}
}
  • D. Kim, W. S. Choi, +9 authors M. Bowen
  • Published 2010
  • Physics
  • Applied Physics Letters
  • The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O2 to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers. 
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