Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure

@inproceedings{Chopra2002ControlOM,
  title={Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure},
  author={Nitin Chopra and Padmakar D. Kichambare and Rodney Andrews and Bruce J Hinds},
  year={2002}
}
Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12-60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/ H2/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO2 surface at the edge of the “mesa” structure with a diameter equal to the thickness of the SiO2 layer.