Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge 1-xSnx Buffer Layer

Abstract

We investigated the dependence of strain relaxation and Sn precipitation on the thickness and the growth temperature of the Ge1-xSnx layer on a virtual Ge substrate. We found that the strain relaxation of the Ge1-xSnx layers is enhanced by increasing the thickness of the Ge1-xSnx layers. Additionally, the much higher degree of strain relaxation of 87% and… (More)

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