Contribution of ICP-IDMS to the certification of antimony implanted in a silicon wafer--comparison with RBS and INAA results.

@article{Pritzkow2001ContributionOI,
  title={Contribution of ICP-IDMS to the certification of antimony implanted in a silicon wafer--comparison with RBS and INAA results.},
  author={Wolfgang Pritzkow and Jochen Vogl and Achim Berger and K. -W. Ecker and R. Gr{\"o}tzschel and Patrick Klingbeil and L Persson and Gregory D. Riebe and Uwe W{\"a}tjen},
  journal={Fresenius' journal of analytical chemistry},
  year={2001},
  volume={371 6},
  pages={867-73}
}
A thin-layer reference material for surface and near-surface analytical methods was produced and certified. The surface density of the implanted Sb layer was determined by Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA), and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) equipped with a multi-collector. The isotopic abundances of Sb (121Sb and 123Sb) were determined by multi-collector ICP-MS and INAA. ICP-IDMS measurements… CONTINUE READING
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