Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2… CONTINUE READING

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