Continuous analytic current-voltage (I–V) model for long-channel doped surrounding-gate MOSFETs (SGMOSFETs)

Abstract

Continuous analytic current (-) voltage (I-V) model for cylindrical doped surrounding-gate MOSFETs (SGMOSFETs) is presented. Starting from Poissonpsilas equation, the dopant effect is considered approximately by a superposition principle with the exact channel potential and the charge equations in the depletion approximation. The current equation based on… (More)

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