Contact Engineering High Performance n-Type MoTe2 Transistors.

@article{Mleczko2019ContactEH,
  title={Contact Engineering High Performance n-Type MoTe2 Transistors.},
  author={Michal J. Mleczko and Andrew C. Yu and Christopher M. Smyth and Victoria Chen and Yong Cheol Shin and Sukti Chatterjee and Yi-Chia Tsai and Yoshio Nishi and Robert M. Wallace and Eric Pop},
  journal={Nano letters},
  year={2019}
}
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400 µA/µm at 80 K and >200 µA/µm at 300 K) and relatively low contact resistance (1.2 to 2 kΩ∙µm from 80… 

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