Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

@article{Borrel2015ConsiderationsFE,
  title={Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics},
  author={Julien Borrel and Louis Hutin and Olivier Rozeau and Perrine Batude and T. Poiroux and F. Nemouchi and Maud Vinet},
  journal={2015 Symposium on VLSI Technology (VLSI Technology)},
  year={2015},
  pages={T116-T117}
}
In the overwhelming majority of cases, current-voltage characteristics of metal-based contacts on semiconductors are non-linear around 0V even for degenerate interfacial doping levels. Any contact resistivity specification is therefore meaningless without the knowledge of the effective bias across the contact. For the first time, the efficiency of a dielectric insertion for contact resistance reduction was properly evaluated by solving the self-consistent case of voltage sharing for an… CONTINUE READING