Consideration of low-frequency noise in MOSFETs for analog performance

@article{Hu1996ConsiderationOL,
  title={Consideration of low-frequency noise in MOSFETs for analog performance},
  author={Chun Hu and G. Li and E. Worley and Jane H. White},
  journal={IEEE Electron Device Letters},
  year={1996},
  volume={17},
  pages={552-554}
}
Low-frequency noise characteristics of MOSFETs have been studied in terms of their dependence on metal interconnect perimeter length, device W/L ratio, and gate-biasing voltage. In contrast to the theoretical model, a noise intensity increasing with lowering gate biasing was observed, which suggests that a compromise between noise performance and gain/offset voltage needs to be carefully examined in analog circuit design. Low-frequency noise was also found to be dependent on W/L ratio in… CONTINUE READING
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