Consideration of impact of GaN HEMT for class E amplifier

Abstract

This paper demonstrates GaN HEMT as the transistor switch for 13.56 MHz class E amplifier. It is shown that GaN HEMT has capability of realizing very high efficiency class E amplifier at higher frequency than Silicon MOSFETs. Problem of negative threshold voltage, i.e., "normally on" characteristics, is considered. It is considered using second voltage… (More)

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