Conformal mapping based DC current model for double gate tunnel FETs

@article{Biswas2014ConformalMB,
  title={Conformal mapping based DC current model for double gate tunnel FETs},
  author={Arnab Biswas and Luca De Michielis and Cem Alper and Adrian M. Ionescu},
  journal={2014 15th International Conference on Ultimate Integration on Silicon (ULIS)},
  year={2014},
  pages={85-88}
}
In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson's equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations for varying device parameters is demonstrated and the advantages and limitations of the new… CONTINUE READING

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